PART |
Description |
Maker |
BF904WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Philips Semiconductors
|
BF909WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Vishay Siliconix Philips Semiconductors
|
3SK295 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK297ZP-TL-E 3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
3SK318 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Hitachi Semiconductor
|
3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
3SK298ZP-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF997 |
N-channel dual-gate MOS-FET Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
3SK300 3SK300ZR-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-61AA, MPAK-4 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Comchip Technology Co., Ltd. Renesas Electronics Corporation
|